1. <rp id="2hvqo"></rp>
  2. <font id="2hvqo"></font>
      <rp id="2hvqo"></rp>
      <b id="2hvqo"></b>
      咨詢熱線

      13651969369

      當前位置:首頁   >  產品中心  >  二維材料  >  硒化物晶體  >  WSSe 硒化硫鎢晶體

      WSSe 硒化硫鎢晶體

      簡要描述:Our WSSe alloys with the chemical formula WS2xSe2(1-x) crystals perfectly crystallize in 2H phase and come at different alloy ratios x.

      • 更新時間:2024-06-03
      • 產品型號:
      • 廠商性質:生產廠家
      • 訪  問  量:501

      詳細介紹

      Our WSSe alloys with the chemical formula WS2xSe2(1-x) crystals perfectly crystallize in 2H phase and come at different alloy ratios x. Our crystals are grown using two different techniques through chemical vapor transport (CVT) or flux zone growth (see description of these two methods below) and their composition values were determined by XPS, SAED, and EDS measurements. These crystals all possess extremely narrow PL bandwidths, display clean PL spectra, high carrier mobility, extremely clean and sharp XRD peaks, and negligible amount of defects (see published results as well as CVT vs. Flux based methods below ). These crystals come with guaranteed alloying and valleytronic response, sharp PL, and good electronic response.

      Important advantages of our crystals

      1. Crystals come fully characterized using macro, micro, and nanoscale measurements (see below)

      2. Thanks to our improved flux zone growth method, our crystals are homogeneously alloyed which means across the specimen you will only find one particular x composition.

      3. No separation: Phase separation is commonly observed in 2D TMDCs alloys when cooling profiles are not controlled carefully. Our R&D team has worked over five (5) years to solely solve this problem.

      Properties of layered WSSe alloys

      Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.



      產品咨詢

      留言框

      • 產品:

      • 您的單位:

      • 您的姓名:

      • 聯系電話:

      • 常用郵箱:

      • 省份:

      • 詳細地址:

      • 補充說明:

      • 驗證碼:

        請輸入計算結果(填寫阿拉伯數字),如:三加四=7
      泰州巨納新能源有限公司
      • 聯系人:陳谷一
      • 地址:江蘇省泰州市鳳凰西路168號
      • 郵箱:taizhou@sunano.com.cn
      • 電話:021-56830191
      聯系我們

      掃一掃以下二維碼了解更多信息

      銷售微信咨詢

      網站二維碼

      版權所有©2024泰州巨納新能源有限公司All Rights Reserved    備案號:蘇ICP備17000059號-2    sitemap.xml    總訪問量:50015
      管理登陸    技術支持:化工儀器網    
      HD老熟女BBn