GeS2

簡要描述：GeS2晶體Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description.

更新時間：2024-06-02
產品型號：
廠商性質：生產廠家
訪問量：620

產品咨詢聯系我們

產品分類

二維材料

鈣鈦礦/OLED 異質結 MOFS材料其他二維材料二維材料溶液二維材料薄膜二維材料粉末絕緣體黑磷六方氮化硼晶體碲化物晶體硒化物晶體硫化物晶體查看全部產品

詳細介紹

Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description. GeS2 vdW crystals were grown using chemical vapor transport technique at high pressures and temperatures over 2 months to ensure high crystallinity and vdW nature. The crystals large is size and measure ~1cm in size. The crystal itself exhibits unique layered vdW form with quasi-1D or anisotropic ribbon like structure much like in ReS2, ReSe2, or TiS3. Many of its properties are still not well established in bulk and remains unknown from few-layer to monolayers.

產品咨詢