TiS3 nanosheets 三硫化鈦納米片

Advantages of TiS3 nanoribbons over TiS3 crystals

Similar to TiS3, Ti/TiS3 nanosheets stacks can be mechanically exfoliated onto variety substrates
VLS grown TiS3 are already really thin (~10) this mechanical exfoliation enables you to achieve monolayers much easily compared to bulk TiS3
It is ideal for high update (battery, gas sensing / storage) applications
TiS3 is a layered material like MoS2 and other layered systems. However, the crystal displays strong crystalline anisotropy which results in direction dependent properties like thermal conductivity, electronic mobility, and excitonic binding energies. Recent studies have proposed TiS3 as high carrier mobility 2D transistors [1], new IR material [1], as well as polarized emission material [2,3]. In a typical order, a large number of layered needle like sheets are contained in a capsule sealed under Argon environment.

Crystals have been characterized by TEM, XPS, SIMS, Raman, and XRD and possess perfect 1:3 stoichiometry and defect density less than 1 defects / 10,000 unit cells.

Crystal size ~ 1 cm

Material characteristics

High carrier mobility semiconductor
2D anisotropic semiconductor
2D Catalytic material
Related literature

[1] "Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct-Gap Semiconductor with High and Anisotropic Carrier Mobility"; Angew Chem Int Ed Engl. 2015 Jun 22;54(26):7572-6

[2] Unusual lattice vibration characteristics in whiskers of the pseudo-one-dimensional titanium trisulfide TiS3; Nature Communications volume 7, Article number: 12952 (2016) doi:10.1038/ncomms12952 [Link]

[3] Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties; Scientific Reports volume 6, Article number: 22214 (2016)

[4] Angle resolved vibrational properties of anisotropic transition metal trichalcogenide nanosheets; Nanoscale, 2017,9, 4175-4182

Publications from this product

H. Yi et. al. The band structure of the quasi-one-dimensional layered semiconductor TiS3(001) Appl. Phys. Lett. 112, 052102 (2018)